| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
1987-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1989-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_937cfad944aff5481f57ad13b44bd20f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cdb28f1b0294aae28b0bac2cf397c7b |
| publicationDate |
1989-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4871684-A |
| titleOfInvention |
Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors |
| abstract |
A semiconductor process for fabricating bipolar devices of one type and extendible to include bipolar devices of a second type in the same epi-layer. The process protects selected surfaces of the epi-layer against deleterious processes associated with the formation of future emitter/contact regions for the devices. Subsequently, such emitter/contact regions are formed beneath such protected surfaces and contribute to enhanced device performance. The process also provides improved planarization of an insulating layer on the epi-layer by chemical-mechanical polishing. The planarization in conjunction with a mask formed in the insulating layer facilitates the formation of self-aligned emitter/base regions to appropriate thicknesses for high performance devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6767798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107481930-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107481930-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6011283-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7214593-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5137840-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5288660-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5106783-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007075364-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7435628-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6559517-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003189239-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6949421-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6869853-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6777288-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0184631-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002102787-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6562547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5039623-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004126978-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6492237-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5063168-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7259411-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7026666-B2 |
| priorityDate |
1987-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |