http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4853339-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b94d2715cda37c1f23e48f9f4f23422 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-072 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-108 |
| filingDate | 1988-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1989-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb629dd36ca41908cdad4e8a2a0fce20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fb9b04058063b4d48b75dc2d5b8ada6 |
| publicationDate | 1989-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-4853339-A |
| titleOfInvention | Method of sensitizing Pb-salt epitaxial films for schottky diodes |
| abstract | In a process of preparing an infrared sensitive photodiode comprising the eps of n (1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of PbS, PbSe, PbTe, PbS x Se 1-x , PbS x Te 1-x , PbSe x Te 1-x , Pb y Sn 1-y S, Pb y Sn 1-y Se, Pb y Sn 1-y Te, Pb y Sn 1-y S x , Pb y Sn 1-y S x Te 1-x , Pb y Sn 1-y Se x Te 1-x , Pb z Cd 1-z S, Pb z Cd 1-z Se, Pb z Cd 1-z Te, Pb z Cd 1-z S x Se 1-x , Pb z Cd 1-z S x Te 1-x , and Pb z Cd 1-z Se x Te 1-x , wherein 0<x<1, 0<y<1, and 0<z<1, to cover at least a portion of the surface of a substrate composed of an infrared transparent single crystal material selected from the group consisting of n (a) alkali metal halides and n (b) alkaline earth halides; n (2) vacuum depositing Pb metal onto a portion of the epitaxial layer of semiconductor alloy material to form a non-Ohmic Pb metal contact; and n (3) forming an Ohmic contact on another portion of the epitaxial layer of semicondcutor alloy material; n the improvement comprising: n after step (1) but prior to step (2), forming a layer of a lead halide selected from the group consisting of PbCl 2 , PbBr 2 , PbF 2 , and mixtures thereof on the epitaxial layer of semiconductor alloy material by exposing the epitaxial layer to vapor of the lead halide in the presence of a flow of oxygen-containing gas wherein n (a) the lead halide vapor is produced by heating the solid lead halide at a temperature T 1 wherein 200° C.≦T 1 ≦500° C., n (b) the epitaxial layer of semiconductor material is heated at a temperature T 2 wherein 100° C.≦T 2 ≦300°C. and wherein 100° C.≦T 1 -T 2 ≦350° C., and n (c) wherein the oxygen-containing gas is selected from the group consisting of (i) air, (ii) oxygen, and (iii) a mixture of from 20 to less than 100 weight percent of oxygen and an inert dilutant gas which will not react with the lead halide, alkali metal halides, alkaline earth halides, or the semiconductor alloy material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015325723-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2426628-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2426628-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005076375-A1 |
| priorityDate | 1988-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.