| abstract |
An ion-sensitive FET sensor has a MOSFET gate isolating membrane whose surface is covered by an ion-sensitive layer. A redox layer having a redox function is provided between the isolating membrane and the ion-sensitive layer to improve operating stability and speed of response. An electrically conductive layer or a combination of a thin metal film and an electrically conductive layer is provided between the isolating membrane and the redox layer to further improve operating stability, the adhesion of the layers and the durability of the sensor. Also disclosed are optimum materials for use as an ion carrier employed in the ion-sensitive layer. |