| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-432 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate |
1982-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1986-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0898020cf4df6be93c9c877917704666 |
| publicationDate |
1986-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4583105-A |
| titleOfInvention |
Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
| abstract |
This invention relates to an improved heterojunction FET. More specifically the invention is directed to a heterojunction FET device in which the contact to the semiconductor gate is ohmic in character. The gate and channel regions of the FET have the same barrier height relative to an intervening third layer of semiconductor and sandwich the third layer of undoped semiconductor. The resulting symmetry of the structure provides a threshold voltage which lies normally near zero volts and is controllable upwardly or downwardly by adding an n or p type dopant to the undoped third layer or region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5047355-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299821-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518621-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7888221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6121642-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4821082-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4965645-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4710478-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4860067-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008318385-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105633165-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7271457-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4675711-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4641161-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4866491-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4870469-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004188703-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006096464-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006096464-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5245207-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11139374-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4732870-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105633165-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7465976-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006197121-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006258072-A1 |
| priorityDate |
1982-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |