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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
filingDate 1982-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1984-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caf023a641ef792837e63b38221a26f4
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publicationDate 1984-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4474625-A
titleOfInvention Method for superficial annealing of semiconductor materials using pulsed micro-wave energy
abstract The present invention relates to a method for superficial annealing of a semi-conductor wherein a sample of the semi-conductor material is placed inside a cavity resonator, and a microwave pulse is generated inside said resonator, the said pulse being long and strong enough to cause the superficial annealing and/or fusion of the sample and its subsequent re-crystallization.
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priorityDate 1981-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 48.