| abstract |
A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region composed of SiaC1-a (0.4<a<1), [SibC1-b]cH1-c (0.5<b<1, 0.6</=c<1), [SidC1-d]eX1-e (0.47<d<1, 0.8</=e<1, X: halogen) or [SifC1-f]g(H+X)1-g (0.47<f<1, 0.8</=g<1, X: halogen]. |