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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16
filingDate 1982-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1984-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e2bf207bec21d21ef25108dca7c4464
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publicationDate 1984-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4447277-A
titleOfInvention Multiphase thermoelectric alloys and method of making same
abstract There is disclosed new and improved multiphase thermoelectric alloys and a method for making the same. The alloys are disordered materials having a multiplicity of matrix crystallites separated by generally disordered grain boundaries containing transitional phases and grain boundary regions of various phases including electrically conductive phases having at least one phase having high electrical conductivity. The alloys are formed from a mixture of at least two separately prepared multiple element compounds preferably a first compound Bi10Sb30Te60 or Bi40Te48Se12 and a second compound Ag25Sb25Te50. These compounds while crystalline, have different crystalline structures. They themselves are polycrystalline and do not represent the most stable crystalline structure. The first compound has a rhombohedral crystalline structure and the second compound has a face centered cubic crystalline structure. The compounds are combined in solid particulate form in proportions of 97 to 99.25 percent Bi10Sb30Te60 and 3 to 0.25 percent Ag25Sb25Te50 or 99 percent Bi40Te48Se12 to 1 percent Ag25Sb25Te50. The mixture is then heated in a quartz tube to an elevated temperature and then drawn through a temperature gradient for cooling. The alloys include in the grain boundary regions various phases of silver and tellurium. The silver containing phases establish low resistance current paths through the crystallites to provide the alloy with high electrical conductivity. The disorder of the grain boundaries and the non-highly electrical conductive phases of the grain boundary regions provide low thermal conductivity desired for thermoelectric applications. Also disclosed are alloys doped with a dopant such as tellurium iodide to form thermoelectric alloys having maximized S2 sigma products.
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