| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2051317369a779747701bc0ebe411a4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate |
1979-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1982-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f8e148c245a11d96fb3a8a1373fdd93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3e3ec41fbb8a6090b50f6abc77fde8f |
| publicationDate |
1982-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4355396-A |
| titleOfInvention |
Semiconductor laser diode and method of making the same |
| abstract |
A semiconductor laser diode includes a substrate of indium phosphide of one conductivity type having on a surface thereof an indium phosphide first confinement layer of the same conductivity type followed by an active layer of indium gallium arsenide phosphide and an indium phosphide second confinement layer of the opposite conductivity type. On the second confinement layer is an indium gallium arsenide phosphide capping layer of either conductivity type having a stripe shaped opening therethrough. In the opening in the capping layer is a contact layer of indium gallium arsenide phosphide of the opposite conductivity type. The confinement layers, the active layer and the capping layer are formed by liquid phase epitaxy and the contact layer is formed by vapor phase epitaxy. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4966863-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4551186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4987096-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4523212-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4447822-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004251143-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4496403-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0346120-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5181218-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4567060-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0346120-A3 |
| priorityDate |
1979-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |