http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4263340-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c23a1323673a16fb6f1c1f6df4fe292b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate | 1979-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1981-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbf0bd7c818f0a1492ece720c2f9f535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eed929ba92608e78d05cf45e73eb70a0 |
| publicationDate | 1981-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-4263340-A |
| titleOfInvention | Process for producing an integrated circuit |
| abstract | An integrated circuit and process for producing an integrated circuit. The circuit includes two interconnection layers, a lower layer being separated from the substrate by a thin dielectric layer, and separated from the upper layer by a thick dielectric layer, the interconnections between the two interconnection layers being situated outside the zone of the active elements of the integrated circuit. The circuit comprises active elements deposited for example on portions of an n-type layer supported by a substrate of semi-insulating gallium arsenide. Ohmic and Schottky contacts are connected either to the lower interconnection layer or to the upper interconnection layer. The thin dielectric layer is for example a silica layer whose thickness is less than 1,000 Angstroms, the thick dielectric layer having a thickness of 5,000 to 10,000 Angstroms. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012220127-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4499656-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5693969-A |
| priorityDate | 1978-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.