http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4217547-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b94d2715cda37c1f23e48f9f4f23422 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1979-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1980-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3cd00067ac272d2f297ea5237f90d79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e539657c546ce3cb7c28bd11ca723966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_babd8cc0e4d5c9285476b7910303ac23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66a9216fcb92bea02243780e01eae69c |
| publicationDate | 1980-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-4217547-A |
| titleOfInvention | Method for determining the compensation density in n-type narrow-gap semiconductors |
| abstract | A method for determining the compensation density of narrow-gap semiconductors. Photo-excited carriers are generated by uniformily irradiating a sample with a laser pulse of a particular density and pulse width for a particular time length and at a low sample temperature. The laser wavelength is chosen with a photon energy sufficiently high that carriers are excited from the conduction band by normal intrinsic absorption (one-photon absorption). Subsequent to the laser pulse, conductivity-voltage measurements are taken as a function of time during the photo-electron decay. Such measurements are made for different applied source-detector connections on the same sample with identical pulse-time values for each different correction. The sample is then laser-pulsed as before with a magnetic field normal to the sample surface to obtain Hall-voltage measurements. The measurements are averaged for the same time duration and the average of all curves are used in the determination. From the conductivity-voltage measurments and the Hall-voltage measurements, the mobility μ, and carrier density n, can be determined. The time dependence of μ and n measured during the photo-electron decay yields values of mobility as a function of n. A mobility vs carrier density curve is then prepared and compared with previously prepared curves to obtain a match and thereby determine the quality of the sample. Thus characterization of n-type narrow-gap semiconductors can be made. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4346348-A |
| priorityDate | 1979-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3468413 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524988 |
Total number of triples: 18.