Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f369cde80f534e86ec7d01d5a80628ad |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49103 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-0054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L1-2293 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-22 |
filingDate |
1977-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1980-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_941bd0a4bc633e4ace66165503417509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5b20b38577d4becc52267c5cede03c8 |
publicationDate |
1980-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-4204185-A |
titleOfInvention |
Integral transducer assemblies employing thin homogeneous diaphragms |
abstract |
A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5376818-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5387803-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0430681-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5405786-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0430681-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4317126-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5002901-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5840597-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5569626-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4996627-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4275406-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4672354-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1606600-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4359498-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3211968-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4987780-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4814856-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4411158-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4400869-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4889590-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-8103086-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5365789-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6140143-A |
priorityDate |
1977-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |