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filingDate 1977-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1980-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1980-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4204185-A
titleOfInvention Integral transducer assemblies employing thin homogeneous diaphragms
abstract A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4411158-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4400869-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4889590-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-8103086-A1
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Total number of triples: 43.