| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-265 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
1977-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1979-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f234f7e33f6c8812e7884d5939a28068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c592c0c95427b249d59276c27794ddb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5c42f9fc62a96b3f149450f870c0553 |
| publicationDate |
1979-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4180439-A |
| titleOfInvention |
Anodic etching method for the detection of electrically active defects in silicon |
| abstract |
Electrically active defects, i.e., current-carrying defects or leakage paths in silicon crystals, are detected by an anodization process. The process selectively etches the crystal surface only where the electrically active defects are located when the anodization parameters are properly selected. Selected surface portions of the silicon structure are exposed to a hydrofluoric acid solution which is maintained at a negative potential with respect to the silicon structure. When the potential difference is set to a proper value, etch pits are formed in the surface of the silicon only at those locations overlying electrically active defects which impact device yield. The defects are observed and counted to provide a basis to predict yield of desired semi-conductor devices to be formed later in the silicon structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0139795-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4487661-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4874484-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5015346-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4514436-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4305297-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4305297-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5838716-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5277769-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4520448-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4385971-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4303482-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6248601-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5633172-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2508708-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0139795-A2 |
| priorityDate |
1976-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |