Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-06 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-06 |
filingDate |
1977-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1979-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11535316b23e02d78aa0e45151f87cfc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0c24037c2b82ee494191875b993ac17 |
publicationDate |
1979-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-4157564-A |
titleOfInvention |
Deep diode devices |
abstract |
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6247237-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9859098-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9859098-A3 |
priorityDate |
1976-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |