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filingDate 1977-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1979-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11535316b23e02d78aa0e45151f87cfc
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publicationDate 1979-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4157564-A
titleOfInvention Deep diode devices
abstract Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.
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priorityDate 1976-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.