| abstract |
Semi-insulating GaAs material is qualified for ion implantation by taking a sample or samples from the material to be evaluated, polishing a surface of the sample, and chemically etching the surface to remove mechanical damage. The surface is bombarded with ions of an inert gas such as krypton, helium, argon, neon, or xenon. After bombardment, the sample is annealed and the sheet resistance is measured to determine if it meets a predetermined acceptable value. |