| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6d1848b93943c5ad8677a4d3973bc10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B7-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-956
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-90 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B7-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B7-22 |
| filingDate |
1978-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1979-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b9d417e7c142b2e66024df63380d922 |
| publicationDate |
1979-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4153527-A |
| titleOfInvention |
Manufacture of carbides and the like |
| abstract |
A metal processing furnace of the indirect arc type having opposed electrodes projected into and establishing an ionized atmosphere in the furnace crucible is provided with apparatus that introduces a finely divided charge mixture consisting essentially of silica and coke into the system for free-fall into and through the ionized atmosphere. Following reaction of the mixture's ingredients in the ionized atmosphere, silicon carbide crystals are deposited at the bottom of the furnace interior below the ionized atmosphere for subsequent collection and removal from within the furnace system. By control of charge composition and process parameters, silicon carbide crystals having predominantly either alpha or beta crystalline structures and with crystal sizes predominantly in the range of 250 to 3,000 microns are produced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8671855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4276275-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6117401-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5225651-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011079171-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103757703-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0029879-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0029879-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015086100-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4624735-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5037524-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019198817-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4917785-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5242479-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4423303-A |
| priorityDate |
1976-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |