| abstract |
A pyrogenic oxide is grown on a silicon wafer in a furnace by oxidizing hydrogen in the presence of an excess amount of oxygen as well as anhydrous hydrogen chloride to produce steam within the furnace. After growing a suitable pyrogenic oxide layer, the hydrogen and hydrogen chloride flows are turned off while the oxygen flow is continued to grow a dry oxide. A nitrogen anneal while the wafer is slowly pulled from the furnace completes the hybrid, radiation hard oxide layer. |