| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate |
1975-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1977-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d933fb84f257449d4aa23d5d188a09c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_918116e0984ca1023bad62003cb0cd4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22a42185df6720a1aedff17baffe8524 |
| publicationDate |
1977-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4050966-A |
| titleOfInvention |
Method for the preparation of diffused silicon semiconductor components |
| abstract |
A method for preparing semiconductor components from silicon as the base material. The components have at least two zones, produced by diffusion, with different conduction type. The diffusion of the individual zones takes place from dopant containing nickel layers applied at the semiconductor crystal surface. The nickel layer including the dopant contained therein, is applied by chemical means. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009142911-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7846823-B2 |
| priorityDate |
1968-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |