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filingDate 1976-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1977-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1977-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-4049488-A
titleOfInvention Method of manufacturing a semiconductor device
abstract The invention relates to a method of manufacturing a semiconductor device in which an etching process is used so as to etch regions consisting of A III B V compounds selectively relative to each other. According to the invention in the etching process an etching bath is used having a water-dissolved oxidizing material and a reducing material constituting together a redox system. In such an etching bath with redox system the selectivity is established by the choice of the concentrations of the materials and of the pH.
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priorityDate 1975-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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