| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42206fe75eab96a992861f84398e420e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02161 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate |
1975-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1977-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf36fcdf4ebe45bfe000f15e902a92e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe834a637e328105e61653ede3fc53ea |
| publicationDate |
1977-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4011578-A |
| titleOfInvention |
Photodiode |
| abstract |
The invention relates to a photodiode having a semiconductor body comprising regions of opposite conductivity types which are separated by a p-n junction and of which at least one region has an anti-reflective layer. n The anti-reflective layer consists of tin-doped indium oxide and forms an ohmic connection with the one region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008574-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008258143-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011183463-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4246043-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4278831-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0950264-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009293938-A1 |
| priorityDate |
1974-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |