| abstract |
New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures thereof below their crystallization temperature and substantially in excess of the temperature at which its conductivity at room temperature versus annealing temperature curve decreases sharply from a relatively high constant value and allowing the same to cool to room temperature. |