| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42206fe75eab96a992861f84398e420e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-904 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0738
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
1971-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1976-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26288ddaae68d3aa0f933495274afbe9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6661e6d312ad533030f38362fec8a76 |
| publicationDate |
1976-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-3969744-A |
| titleOfInvention |
Semiconductor devices |
| abstract |
A semiconductor device is described containing at least two insulating gate field effect transistors in a common wafer. One of the transistors exhibits high gain but the other transistor exhibits low gain as a result of selectively implanting into its channel neutral ions and crystal damage which reduce the effective mobility of charge carriers therein. In one embodiment, the low gain transistor serves as a load for the high gain transistor. In a second embodiment, the low gain transistor is a parasitic transistor formed between adjacent circuit elements. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4578694-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4035207-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4391651-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5514896-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6808970-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008005905-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5250445-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4080718-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004126998-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6455903-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10261307-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5497020-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10261307-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4257826-A |
| priorityDate |
1971-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |