| abstract |
A method of manufacturing silicon carbide crystals in which a core of silicon dioxide is embedded in a mass of granular silicon carbide, or materials which form silicon carbide on heating this mass being heated to a temperature at which silicon dioxide volatilizes, i.e. above about 1500°C, and the silicon carbide coheres. This leaves a cavity, formerly occupied by the silicon dioxide which is surrounded by silicon carbide. Heating is then continued at a temperature, above about 2500°C, at which silicon carbide crystals are formed on the walls of the cavity. |