| abstract |
The method for making an improved field-effect transistor by using a thick insulating layer, the thickness of which is larger than the diffusion length of the impurity forming the base region in a following process step, as a mask for successive diffusion of two different impurities of different conductivity types and by using a portion of the thick insulating layer on the drain region as a portion of the gate insulating layer to reduce a parastic capacitance between the gate and the drain. |