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filingDate 1973-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1975-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1975-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3901736-A
titleOfInvention Method of making deep diode devices
abstract Parallel spaced P-N junctions extending as columns or planes through a silicon wafer are made by covering the wafer surface so that portions are exposed in desired pattern, then removing portions of the surface of the wafer so exposed to produce recesses in the wafer, thereafter filling the recesses with aluminum and removing the covering, then heating and forming a liquid body in each recess. By maintaining a finite thermal gradient in a first direction through the wafer and maintaining a zero thermal gradient through the wafer in a direction normal to that first direction, the several liquid bodies are caused to migrate through the silicon wafer along separate straight lines to reproduce the recess pattern as recrystallized regions within the wafer.
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