http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3859716-A

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filingDate 1973-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1975-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2876047fb071091ab50586cb62ed7eb
publicationDate 1975-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3859716-A
titleOfInvention Production of thin layer complementary channel mos circuits
abstract A system for the production of thin layer complementary channel MOS circuits in which the semiconductor zones are applied in the form of island-like layers to an electrically insulating substrate. These semiconductor zones are provided with areas of varying doping. A gate insulator layer is in each circuit arranged on such island-like layers for transistors.
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priorityDate 1972-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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