http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3858549-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-12 |
| filingDate | 1973-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1975-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4bb1817d12dab798791a46d195e90b3 |
| publicationDate | 1975-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-3858549-A |
| titleOfInvention | Apparatus for controlled doping of semiconductor crystals |
| abstract | Method and apparatus for controlled doping of semiconductor crystals whereby a semiconductor crystal is enclosed in a housing and a floating melt zone is established along the length thereof while simultaneously controlled volumes of a gaseous doping substance is directed by a conduit to the melt zone for diffusion within the resolidified semiconductor crystals. The volume of doping substance supplied to the crystal is regulated by combination pressures and feed rates, such as by combination of at least two valves having a constant volume chamber therebetween and a program that adjusts the pressure of the dopant supply above the pressure surrounding the crystal melt zone and regulates the frequency of valve operations per unit time. The invention is especially useful for producing n-doped silicon crystals. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4556448-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6059876-A |
| priorityDate | 1973-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.