| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-033 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate |
1971-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1974-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acd52fb5b311582b99866298bc367331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdd9e9ea3ac6c8757f2b12d83ce063f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53465dc6fc4dd35c68e7e5ad94a4e970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a0bb0c0ef43fbf912a5153edec98ce7 |
| publicationDate |
1974-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-3850708-A |
| titleOfInvention |
Method of fabricating semiconductor device using at least two sorts of insulating films different from each other |
| abstract |
A graft base transistor or the like is made by the steps of forming a first, preferably frame-shaped diffusion mask on a first base region doped with boron at an impurity concentration of 1018cm 3, using a nitrided film (Si3N4); diffusing boron at an impurity concentration of 2 X 1020cm 3 through this mask to form the second base region in the first base region; thereafter forming an oxide film (SiO2) on a region except where this mask is left; removing the remaining nitrided film and thus forming a second diffusion mask; and diffusing phosphor at an impurity concentration of 1020cm 3 through the second diffusion mask, whereby the graft base transistor has an emitter, the surface area of which is smaller than the opening area of the second diffusion mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3967988-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2158639-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3912558-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4589002-A |
| priorityDate |
1970-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |