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filingDate 1972-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1974-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1974-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3839104-A
titleOfInvention Fabrication technique for high performance semiconductor devices
abstract Microwave and pico-second switching transistors are fabricated by a process which includes (1) selective in-diffusion combined with selective out-diffusion to form three resistance levels in the base region; (2) composite diffusion masking for selfalignment of the base contact and emitter locations; and (3) the use of an arsenic-doped oxide diffusion source for the formation of emitter regions prior to doping the base contact locations.
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