abstract |
METHOD FOR CONTROLLING THE GROWTH OF SILICON CARBIDE CRYSTALS BY CARRYING OUT THE GROWTH IN THE PRESENCE OF AN ELEMENT OF GROUP III-B OF THE PERIODIC SYSTEM OF THE ELEMENTS, ESPECIALLY, LANTHANUM. THE WURTIZITE MODIFICATIONS CAN BE PRODUCED, WHICH WILL BE USEFUL IN SEMICONDUCTOR DEVICES. IN ADDITION, VERY LONG THIN WHISHERS CAN BE PRODUCED USEFUL FOR REINFORCING OTHER MATERIALS. |