http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3790869-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd221d21998567268ab28734915df324 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-139 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 1972-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1974-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30922f28faa55a5bd5a3192547fc49ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f60f3ff8007ae1b6ffb6c1c69ecd4806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b436e98d8cc05651d4aebac50b61e7e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebb95df60d09cf9d566ef9c56610462b |
| publicationDate | 1974-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-3790869-A |
| titleOfInvention | Humidity sensitive semiconductor device |
| abstract | A semiconductor composite having a rectifying and humidity sensitive characteristic is provided by depositing a tin oxide film on a semiconductor substrate, preferably with an insulating film of a semiconductor compound such as SiO2 of a thickness of 15A to 500A therebetween, and by exposing a portion of the barrier to the atmosphere. It was observed that the rectifying characteristic of the composite becomes easy at a quick response rate at an avalanche current region as the ambient relative humidity is increased and that the composite as supplied with a predetermined reverse bias voltage higher than a breakdown voltage of the composite shows a change in the reverse current at a quick response rate in reverse proportion to the relative humidity of the atmosphere. It was also observed that interposition of the insulating film between the SnO2 film and the semiconductor substrate in a preferred embodiment decreases the reverse leakage current, raises the reverse breakdown voltage and makes uniform the reverse breakdown voltage. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4011577-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2485736-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6577492-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2193856-A1 |
| priorityDate | 1971-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.