| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-026 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 |
| filingDate |
1969-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1972-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d64e09b0088f711ab7aef016dcad3144 |
| publicationDate |
1972-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-3698078-A |
| titleOfInvention |
Diode array storage system having a self-registered target and method of forming |
| abstract |
A self-registered diode array camera tube target is formed utilizing a refractory metal grid as a mask both during etching of the insulating layer protecting the semiconductive substrate from electron beam irradiation and during diffusion of the monolithic diode array into the substrate. The refractory metal grid thus completely overlies the insulating layer between adjacent diodes of the target and, upon the application of a suitable electrical bias to the grid, the landing characteristics of the electron beam upon the target is controlled to inhibit charging of the insulating layer by the scanning beam. A dual grid camera tube target also is disclosed wherein the outermost grid controls the electron beam landing profile while a more positively biased inner grid remote from the electron beam negates the generation of conductivity producing charge carriers at the substrate-insulating layer interface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3841928-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4628588-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3851205-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005285256-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4069074-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5401692-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005287937-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4130891-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11697143-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7037808-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4515654-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5254217-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7095095-B2 |
| priorityDate |
1969-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |