Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a6a9431aa1fe5109ca95ad4e332231b |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-342 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
filingDate |
1970-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1972-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3b0370af13255c2a59fc19643a1b3e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8082af525c087a22f4d5df6c3a05b4c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2ea0bf8725777debeefd8133bc1991c |
publicationDate |
1972-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-3692566-A |
titleOfInvention |
Method of depositing isotropic boron nitride |
abstract |
CHEMICAL VAPOR DEPOSITED ISOTROPIC BORON NITRIDE IS FORMED ON THE INNER WALLS OF A REACTION CHAMBER BY FORMING A VAPRO MIXTURE OF AN OXYGEN CONTAINING ORGANIC BORON COMPOUND WITH AMMONIA AND REATING THE VAPOR MIXTURE IN SAID REACTION CHAMBER AT ABOUT 1100 DEGREES C. TO ABOUT 1900 DEGREES C. AT PRESSURES OF ABOUT ONE TORR TO ATMOSPHERIC. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2475519-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4297387-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4145250-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4655893-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4522849-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4096297-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4544535-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4565741-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0510567-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2302286-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0510567-A2 |
priorityDate |
1970-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |