http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3662356-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-35606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-412
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
filingDate 1970-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1972-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c8245e74500eec89fe4c25f5e76b1bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e3a7f9759154be1c1193b92bc490911
publicationDate 1972-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3662356-A
titleOfInvention Integrated circuit bistable memory cell using charge-pumped devices
abstract An integrated circuit of the bistable memory cell type utilizes two charge-transfer active elements to provide the load resistor function in a cross-coupled MOS transistor flip-flop arrangement of the memory cell. The charge-transfer element is a pulseactivated current generator formed from the substrate common to the memory cell circuit, an n- or p-type doped region diffused therein, an insulating gate layer, and a patterned conducting gate layer common to both elements. The series circuit connection of each active MOS transistor and its associated charge-transfer element is through the respective doped region which is common thereto.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4223333-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4449224-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3747077-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9218511-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5516353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S4996640-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5999442-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4091460-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1001431-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4825409-A
priorityDate 1970-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.