| abstract |
A semiconductor device comprising contiguous layers of crystalline selenium and cadmium selenide with a P-N heterojunction therebetween disposed on a high work function electrode. A thin tellurium film is disposed between the electrode and the selenium layer, and acts as a buffer to provide compatibility between the selenium crystalline structure and the structure of the underlaying electrode. When employed as a stress-sensitive transducer, the device is disposed on a flexible substrate. The device may also be employed as a thin-film diode. |