http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3620832-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42206fe75eab96a992861f84398e420e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-28 |
| filingDate | 1967-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1971-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ffa5121eb1025e7370615a65c7d5da0 |
| publicationDate | 1971-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-3620832-A |
| titleOfInvention | Electrode system particularly semiconductor electrode system and method of producing the same |
| abstract | An electrode system comprising a semiconductive granular layer substantially one grain in thickness is manufactured by embedding a layer of this semiconductive material in an insulating material, e.g., polyurethane so that the peaks of the grains extend substantially above the insulating material i.e., the spaces between the grains are filled to a level well below the peaks of the grains. An electrode is formed on this layer by depositing an electrically conducting layer. The so-coated layer is thereafter subjected to an abrasive on a carrier comprising grains whose average diameter is smaller than the average diameter of the electrically active grains and whose diameter exceeds the average spacing between the active grains to remove only the electrode layer covering the exposed grain peaks without abrading the grains themselves. The grain size of the abrasive is critical to avoid grains of the abrasive being lodged in the depressions between the grains of the semiconductive material and to avoid removing portions of the semiconductive grains. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6066872-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6642656-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4728581-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4107724-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3947707-A |
| priorityDate | 1966-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.