http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3604990-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-93 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate | 1970-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1971-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dee4b4fa042dff19275311419e5d046f |
| publicationDate | 1971-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-3604990-A |
| titleOfInvention | Smoothly changing voltage-variable capacitor having an extendible pn junction region |
| abstract | A voltage-variable semiconductive capacitor is described wherein a smooth alteration in output capacitance is produced by incrementally extending a PN junction along the surface of a semiconductive body with an inversion layer formed below a control electrode insulator characterized by a decreased capacitance with increased span of the insulator from the expanding edge of the PN junction. In a first embodiment of the invention, the decreased capacitance is achieved by increasing the thickness of the control electrode insulator at a linear slope between 0.25 and 3.0 percent while in a second embodiment, the thickness of the control electrode insulator is increased in uniform steps of approximately 200-500 A, to produce a digitalized change in output capacitance. A capacitor structure also is described wherein isolated regions of a first type conductivity within a semiconductive body of second type conductivity are sequentially interconnected utilizing commonly energized control electrodes having a gradually reduced capacitance relative to the underlying semiconductive body with increased departure of each electrode from the edge of the initially extended region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4903086-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9607197-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9607197-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4190850-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5192871-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9308610-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4247860-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3868187-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6031291-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4529994-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3808472-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3767981-A |
| priorityDate | 1970-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.