abstract |
DESCRIBED ARE BULK SEMICONDUCTOR SWITCHING DEVICES HAVING SYMMETRICAL SWITCHING CHARACTERISTICS WITH AN ASSOCIATED CURRENT CONTROLLED NEGATIVE RESISTANCE, AND FORMED FROM AMORPHOUS GLASS-TYPE SUBSTANCES. THE DEVICES OF THE INVENTION CAN BE READILY FABRICATED ON SMALL, INTEGRATED CIRCUITS AND ARE FORMED BY DEPOSITING ON A SEMICONDUCTIVE SUBSTRATE SUCCESSIVE LAYERS WHICH ARE SUBSEQUENTLY HEAT TREATED TO FORM AN AMORPHOUS SEMICONDUCTIVE GLASS, THESE LAYERS COMPRISING SILICON DIOXIDE, LEAD OXIDE AND A MATERIAL SELECTED FROM THE GROUP CONSISTING OF CHROMIUM-CHROMIUM OXIDE, VANADIUM-VANADIUM OXIDE AND MOLYBDENUM-MOLYBDENUM OXIDE. ALSO DESCRIBED IS A METHOD FOR MANUFACTURING SUCH SEMICONDUCTING GLASSES. |