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filingDate 1967-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1971-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42260abf2087d1e76c4a3a1c315325fa
publicationDate 1971-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-3562040-A
titleOfInvention Method of uniformally and rapidly etching nichrome
abstract A PROCESS FOR FABRICATING A NICHROME THIN FILM RESISTOR AS AN INTEGRAL PART OF A SEMICONDUCTOR INTEGRATED CIRCUIT. THE NICHROME RESISTOR IS DEPOSITED ON A LAYER OF SILICON DIOXIDE GROWN OR DEPOSITED ON THE SEMICONDUCTOR SURFACE; ALUMINUM CONTACTS ARE DEPOSITED ON THE NICHROME RESISTANCE ELEMENT AND ALLOYED THERETO.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5472735-A
priorityDate 1967-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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