| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f80f7502fa29eccce5d0ca3b654f4d96 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80379 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2022-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d994ab79254d46ffa0fca865b1adda8e |
| publicationDate |
2023-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2023027015-A1 |
| titleOfInvention |
Hybrid wafer bonding method and structure thereof |
| abstract |
A semiconductor structure includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first via structure in a first dielectric layer, the first via structure including a first contact via surface. At least a portion of the first via structure is in direct contact with the first dielectric layer. The second semiconductor structure includes a second via structure in a second dielectric layer, the second via structure including a second contact via surface. At least a portion of the second via structure is in direct contact with the second dielectric layer. The first contact via surface is bonded with the second contact via surface. The second contact via surface and the first contact via surface have an overlapping interface in the vertical direction. A first barrier layer is formed at a non-overlapping interface in the first contact via surface and the second contact via surface. The first barrier layer contains a multi-component oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11776923-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021183661-A1 |
| priorityDate |
2020-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |