| abstract |
Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise germanium and boron, and a protective layer comprising germanium, silicon and boron that at least partially covers the epitaxial source or drain structures to provide low contact resistivity. |