| abstract |
This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside. |