| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24f54aefd7a75822ce9d6a7759e20068 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-0013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C213-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J23-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-023 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J23-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J35-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J23-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J23-52 |
| filingDate |
2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb2f845ce1df865844c7d5c5bd52c314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d431632d57881da450e61a3c6db9393c |
| publicationDate |
2022-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022410130-A1 |
| titleOfInvention |
Metal-semiconductor hybrid structures, syntheses thereof, and uses thereof |
| abstract |
Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure. In another aspect is provided a metal-semiconductor hybrid structure that includes a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and a second component comprising a metal from Group 7-Group 11. |
| priorityDate |
2020-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |