| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2022-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a6aed2b369691db1f2350b1d95e4d04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286e44f2f3027351d17b7c9cd2cffe64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1de17f6985e6fc1a1989ece0e4146bf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0663f2fa2efb0354f48dac8d33f4d95d |
| publicationDate |
2022-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022367288-A1 |
| titleOfInvention |
Fin isolation structures of semiconductor devices |
| abstract |
A method of forming a fin field effect transistor (finFET) on a substrate includes forming a fin structure on the substrate and forming a shallow trench isolation (STI) region on the substrate. First and second fin portions of the fin structure extend above a top surface of the STI region. The method further includes oxidizing the first fin portion to convert a first material of the first fin portion to a second material. The second material is different from the first material of the first fin portion and a material of the second fin portion. The method further includes forming an oxide layer on the oxidized first fin portion and the second fin portion and forming first and second polysilicon structures on the oxide layer. |
| priorityDate |
2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |