| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 |
| filingDate |
2021-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b2992f6cf19a243211dec6e490a7274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddea6dabe293c1aa7fbcc26d58b17d84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2115bda16a769a00d33137977562de77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c64d6f455c3be7f4a5111500e65508e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_001458c92cb8335e87e3e081d0f46f31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fbb50d1738bbf581cfe34edad2f0e88 |
| publicationDate |
2022-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022352200-A1 |
| titleOfInvention |
Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement |
| abstract |
A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating stack, forming a sacrificial memory opening fill structure in the memory opening, replacing the sacrificial material layers with electrically conductive layers, removing the sacrificial memory opening fill structure selective to the electrically conductive layers, and forming a memory opening fill structure the memory opening after replacing the sacrificial material layers with electrically conductive layers and after removing the sacrificial memory opening fill structure. The memory opening fill structure includes a memory film and a vertical semiconductor channel. |
| priorityDate |
2021-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |