| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4008e4a2500d9673afd2464a1915a70b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2009-02314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-2426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-2405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-205 |
| filingDate |
2021-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f1b4964f04f8a43e9c5cfc5329bb643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1235b12f976b68a85bcd43c412c68fb6 |
| publicationDate |
2022-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022311413-A1 |
| titleOfInvention |
Fin Field-Effect Transistor (FinFET) Resonator |
| abstract |
An integrated circuit may include a resonator formed from FinFET devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. Each of the drive cells may include at least two drive transistors having fins coupled to a drive terminal. Each sense cell may include two sense transistors having one fin coupled to a sense terminal and another fin coupled to ground. Adjacent drive and sense cells may be separated by an intervening region that can accommodate a number of fins. Configured in this way, the resonator can exhibit a high quality factor, low phase noise, and can operate at a frequency that is less than the characteristic resonant frequency as defined by the fin pitch of the drive and sense transistors. |
| priorityDate |
2021-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |