| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d79a94d09706df8648b960a1aa3f91 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1082 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-125 |
| filingDate |
2020-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b28d97106fef25bf1b3ab2a89c34823a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14a5ecd3eb7ff114bc1ebf9f6f49ad66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a035ebe602e6d6945f3fa6481ad044f6 |
| publicationDate |
2022-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022311206-A1 |
| titleOfInvention |
Semiconductor laser device structures and methods of fabrication thereof |
| abstract |
Semiconductor device structures comprising laser diode cavities with at least one of a mode-selective filter and a phase-alignment element, and methods for their fabrication, are disclosed. An example device structure comprises a surface-etched grating distributed-feedback (SEG DFB) laser with a mode-selective reflector structure. The reflector structure is designed to provide higher pot feedback of the fundamental TE0 mode and suppression of higher order mode effects. The reflector structure may be a single interface (single facet) mirror type reflector comprising a spatially patterned reflector, or a multi-interface distributed Bragg reflector (DBR). A phase alignment element may be included to provide precise optical phase control. A photodetector for back-facet power monitoring may be included. A method of fabrication is disclosed, based on a self-aligned process in which DBR features are included on the same mask that is used for the DFB laser grating. |
| priorityDate |
2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |