http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022298642-A1

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filingDate 2022-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_617441748385f62f6046f2ff56c4e512
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publicationDate 2022-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2022298642-A1
titleOfInvention Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
abstract Described herein is a substrate processing technique of preventing particle generation while lowering an inner pressure of a nozzle and improving a film thickness uniformity. According to one aspect thereof, a substrate processing apparatus includes a boat for supporting substrates; an inner tube surrounding the boat and provided with an exhaust hole through which a gas is exhausted along a direction orthogonal to an arrangement direction of the substrates; a mixing structure for generating a mixed gas for processing the substrates; and a nozzle installed apart from an inner lateral surface of the inner tube and through which the mixed gas supplied from the mixing structure is discharged into the inner tube via discharge holes arranged at the nozzle along the arrangement direction of the substrates. A discharge direction of each of the discharge holes is not toward the boat but toward the inner lateral surface of the inner tube.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784070-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020340116-A1
priorityDate 2021-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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