| abstract |
A europium-doped β-sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P8 [at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P80 [at %], P8/P80≤0.9 is satisfied. A light emitting device containing this β-sialon phosphor. |