| abstract |
Low-resistance contacts improve performance of integrated circuit devices that feature epitaxial source/drain regions. The low resistance contacts can be used with transistors of various types, including planar field effect transistors (FETs), FinFETs, and gate-all-around (GAA) FETs. Low-resistance junctions are formed by removing an upper portion of the source/drain region and replacing it with an epitaxially-grown boron-doped silicon germanium (SiGe) material. Material resistivity can be tuned by varying the temperature during the epitaxy process. Electrical contact is then made at the low-resistance junctions. |