| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-453 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-263 |
| filingDate |
2021-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e308aed26e50de41bd07e0fc06d3b787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_348b19f3ac7e66e118a969b533a7a8bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80c6b3b9a917835063e14b7d4fd3346
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a882a27a168c10d36ad3550e3d07489 |
| publicationDate |
2022-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022277938-A1 |
| titleOfInvention |
Substrate processing apparatus, plasma generating device, method of manufacturing semiconductor device, and substrate processing method |
| abstract |
There is provided a technique that includes a process chamber configured to process a substrate; a gas supplier configured to supply a gas into the process chamber; a first plasma electrode unit including a first reference electrode applied with a reference potential and at least one selected from the group of a first application electrode and a second application electrode applied with high-frequency power, the first plasma electrode unit configured to plasma-excite the gas; and a second plasma electrode unit including a second reference electrode applied with a reference potential and a third application electrode applied with high-frequency power, the third application electrode having a length different from a length of the first application electrode or the second application electrode, and the second plasma electrode unit configured to plasma-excite the gas. |
| priorityDate |
2021-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |